Why zno n type

RSC Adv. Synthesis of zinc oxide nanostructures and comparison of their crystal quality. Eichel, R. Space-charge layer complex defects in ZnO nanoparticles—A high field electron paramagnetic resonance analysis. Kakazey, M. Electron paramagnetic resonance in the research of defect formation and thermal processes during grinding of ZnO powders. Sancier, K. ESR investigation of photodamage to zinc oxide powders. Carlos, W. Magnetic resonance studies of ZnO. B — , — Cerrato, E.

Photoactivity under visible light of defective ZnO investigated by EPR spectroscopy and photoluminescence. Janotti, A. Native point defects in ZnO. B 76 , Srivastava, A. Book Google Scholar.

Vlasenko, L. Magnetic resonance studies of intrinsic defects in ZnO: Oxygen vacancy. Kohan, A. First-principles study of native point defects in ZnO. B 61 , — Hydrogen multicentre bonds. Fundamentals of zinc oxide as a semiconductor. Akazawa, H. Identification of defect species in ZnO thin films through process modification and monitoring of photoluminescent properties. A 37 , Vasin, A. Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering.

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Savchenko, D. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals. Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance. Temperature behavior of the conduction electrons in the nitrogen-doped 3C SiC monocrystals as studied by electron spin resonance. Eremin, V. Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors.

Laiho, R. Persistent photoconductivity and electron paramagnetic resonance in zinc oxide ceramics. Mchedlidze, T. Electric-dipole spin-resonance study on extended defects in Czochralski-grown silicon developed by thermal treatment.

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B 72 , Physica B. Codoping for the fabrication of p -type ZnO. Thin Solid Films. Influence of annealing temperature on properties of nitrogen-doped zinc oxide films deposited by magnetron sputtering.

Superlattices Microstruct. Co-doping of aluminium and gallium with nitrogen in ZnO films deposited by RF magnetron sputtering. J Phys-Condens Matter. Fabrication and properties of B-N codoped p-type ZnO thin films. J Phys D Appl Phys. Fabrication and characterization of P — N dual acceptor doped p -type ZnO thin films. Appl Surf Sci. Mater Lett. J Alloys Compd. Chem Phys Lett. Sputtered Al-N codoped p-type transparent ZnO thin films suitable for optoelectronic devices.

Optik Stuttg. For the co-doping with Al using magnetron sputtering, Cho 23 23 Cho S. Properties of nitrogen and aluminium-codoped ZnO thin films grown with different nitrogen flow ratios for solar cell applications.

Curr Appl Phys. Reductions in the carrier density and electronic mobility were observed when the N 2 flow rate was increased. As a consequence, the electrical resistivity increased from 1.

In this case, p-type conduction was observed with a carrier density of 2. Raising the partial pressure of N 2 O, however, changed the electrical conduction to n-type. As a result, films with different types of conduction p-type and n-type were obtained, the best result being Hence, depending on the concentrations of Al and N, p-type or n-type doping may be produced.

Specifically, the partial pressure of N 2 was varied to obtain films with the ideal ratio of Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studies. In addition, the Fermi level shifts to positions closer to the top of the valence band, allowing a more stable p-type ZnO film to be obtained 27 27 Yang P, Zhao Y, Yang H.

Investigation on optoelectronic performances of Al, N codoped ZnO: first-principles method. Ceram Int. Glass substrates were used as substrates for the depositions.

Each substrate was cleaned for s in each of distilled water, acetone and isopropanol in an ultrasonic bath. The partial pressure of Ar was held at 1. An applied power of 60 W was used for 30 min.

The target-substrate separation was 3 cm and the substrate holder was neither intentionally heated nor polarized. X-Ray diffraction procedures: for polycrystalline and amorphous materials. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition.

Semicond Sci Technol. For the calibration of the instrumental FWHM a ceramic ZnO sample produced by sintering, containing sufficiently large grains, such that the FWHM measured could be attributed to the X-ray beam divergence, was used. Room temperature photoluminescence measurements PL were carried out by exciting the samples with the nm line of a He-Cd laser. Comparing the composition of the AZO target with that of the ZnO:Al film, there is a reduction in Zn concentration while the concentration of Al does not change significantly.

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